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Dry etching is currently used in semiconductor fabrication processes due to its unique ability over wet etch to do anisotropic etching (removal of material) to create high aspect ratio structures (e.g. Contents 1 Applications 2 High aspect ratio structures 3 Hardware design 4 See also . This chemistry-related article is a stub. We are sorry, but an unhandled error occurred. The dry etching hardware design basically involves a vacuum chamber, special gas delivery system, RF waveform generator and an exhaust system. See also[edit].

Please help improve this article by adding citations to reliable sources. Unsourced material may be challenged and removed. v t e . Plasma etcher Etching (microfabrication) . Wet Etching Dry Etching highly selective easy to start and stop no damage to substrate less sensitive to small changes in temperature cheaper more repeatable may have anisotropies fewer particles in environment . Dry etching refers to the removal of material, typically a masked pattern of semiconductor material, by exposing the material to a bombardment of ions (usually a plasma of reactive gases such as fluorocarbons, oxygen, chlorine, boron trichloride; sometimes with addition of nitrogen, argon, helium and other gases) that dislodge portions of the material from the exposed surface. Unlike with many (but not all, see isotropic etching) of the wet chemical etchants used in wet etching, the dry etching process typically etches directionally or anisotropically. Dry etching is particularly useful for materials and semiconductors which are chemically resistant and could not be wet etched, such as silicon carbide or gallium nitride. Disqus - Dry Etching Technology For Semiconductors Pdf Download. (June 2016) (Learn how and when to remove this template message) .

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